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| TetraFET D1208UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.65R 45 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5 0.03 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.001 0.005 PIN 2 PIN 4 DRAIN 1 GATE 2 * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 175W 40V 20V 20A -65 to 150C 200C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/95 D1208UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 40W VDS = 12.5V f = 400MHz IDQ = 1.6A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 2A 1 1.6 10 50 20:1 VGS = -5V f = 1MHz f = 1MHz f = 1MHz 40 Typ. Max. Unit V 2 1 5.5 mA A V S dB % -- 120 80 8 pF pF pF VGS(th) Gate Threshold Voltage* TOTAL DEVICE VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance PER SIDE VDS = 0V VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 1.0C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/95 |
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